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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA679 2SA680
DESCRIPTION With TO-3 package Complement to type 2SC1079/1080 High power dissipation APPLICATIONS For audio power amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL PARAMETER 2SA679 VCBO Collector-base voltage 2SA680 2SA679 VCEO Collector-emitter voltage 2SA680 VEBO IC IE PC Tj Tstg Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base -100 -5 -12 12 100 150 -65~150 ae ae V A A W Open emitter -100 -120 V CONDITIONS VALUE -120 V UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SA679 V(BR)CEO Collector-emitter breakdown voltage 2SA680 V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IE=-10mA ;IC=0 IC=-10A; IB=-1A IC=-10A ; VCE=-5V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-5V IC=-7A ; VCE=-5V IE=0 ; VCB=-10V; f=1.0MHz IC=-2A ; VCE=-5V IC=-0.1A ;IB=0 CONDITIONS
2SA679 2SA680
SYMBOL
MIN -120
TYP.
MAX
UNIT
V -100 -5 -3.0 -2.5 -0.1 -0.1 40 15 900 6 pF MHz 140 V V V mA mA
hFE-1 Classifications R 40-80 Y 70-140
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA679 2SA680
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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